irf7204.pdf

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PD - 9.1103B
IRF7204
HEXFET
®
Power MOSFET
Adavanced Process Technology
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
Description
l
S
S
S
G
1
8
7
A
D
D
D
D
2
V
DSS
= -20V
R
DS(on)
= 0.060Ω
I
D
= -5.3A
3
6
4
5
To p V ie w
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-5.3
-4.2
-21
2.5
0.020
± 12
-1.7
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Min.
–––
Typ.
–––
Max.
50
Units
°C/W
8/25/97
IRF7204
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
-20
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
-0.022 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.060
V
GS
= -10V, I
D
= -5.3A
Ω
––– 0.10
V
GS
= -4.5V, I
D
= -2.0A
––– -2.5
V
V
DS
= V
GS
, I
D
= -250µA
7.9 –––
S
V
DS
= -15V, I
D
= -5.3A
––– -25
V
DS
= -16V, V
GS
= 0V
µA
––– -250
V
DS
= -16V, V
GS
= 0V, T
J
= 125 °C
––– -100
V
GS
= -12V
nA
––– 100
V
GS
= 12V
25 –––
I
D
= -5.3A
5.0 –––
nC V
DS
= -10V
8.0 –––
V
GS
= -10V
14
30
V
DD
= -10V
26
60
I
D
= -1.0A
ns
100 150
R
G
= 6.0Ω
68 100
R
D
= 10Ω
D
2.5
4.0
860
750
230
–––
nH
–––
–––
–––
–––
pF
Between lead,6mm(0.25in.)
from package and center
of die contact
V
GS
= 0V
V
DS
= -10V
ƒ = 1.0MHz
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -2.5
showing the
A
G
integral reverse
––– ––– -15
p-n junction diode.
S
––– ––– -1.2
V
T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
––– 85 100
ns
T
J
= 25°C, I
F
= -2.4A
––– 77 120
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
300µs; duty cycle
≤
2%.
I
SD
≤
-5.3A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Surface mounted on FR-4 board, t
≤
10sec.
IRF7204
-I
D
, Drain-to-Source Current ( A )
-V
DS
, Drain-to-Source Voltage ( V )
-I
D
, Drain-to-Source Current ( A )
-V
DS
, Drain-to-Source Voltage ( V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
-V
GS
, Gate-to-Source Voltage ( V )
R
DS (on)
, Drain-to-Source On Resistance
( Normalized
)
-I
D
, Drain-to-Source Current ( A )
T
J
, Junction Temperature ( °C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF7204
-V
GS
, Gate-to-Source Voltage ( V )
C , Capacitance ( pF )
12
-V
DS
, Drain-to-Source Voltage ( V )
Q
G
, Total Gate Charge ( nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
-I
SD
, Reverse Drain Current ( A )
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
I
10
1ms
10ms
1
0.1
T
A
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
-V
SD
, Source-to-Drain Voltage ( V )
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF7204
6.0
V
DS
V
GS
R
D
5.0
D.U.T.
+
-I D , Drain Current (A)
4.0
-10V
3.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.0
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
1.0
V
GS
10%
0.0
25
50
75
100
125
150
TC , Case Temperature
( ° C)
90%
V
DS
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
(Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
10
Thermal Response
0.1
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
R
G
V
DD

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