FTMEMEAMay2015.pdf

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Component Focus: pages 2-13
NXP helps embedded developers to protect
application code and data from theft and cloning
Design Notes: pages 14-17
Crocus Technology shows how to sense current
in a board trace with two magnetic sensors
Application Spotlight: pages 18-24
Energy
Application Spotlight on
Atmel’s highly integrated G3-PLC implementation
for advanced power-line communication
Technical View: pages 26-27
How to extend the life of aluminium capacitors,
often the first part of a power supply to fail
NEWS
IN
BRIEF
STAR
PRODUCT
Future Electronics to distribute
Viking Tech passive devices
Future Electronics has announced a
worldwide distribution agreement with Viking
Tech America Corporation. Headquartered in
Taiwan, Viking Tech is the leader in thin-film/
thick-film integrated passive devices and
discrete passive components on various
substrates such as silicon, ceramic and glass.
Viking Tech’s passive products benefit from
innovative technology which combines the
technical advantages of thin-film processes
and the low cost of thick-film processes.
Its products include precision resistors,
current-sensing resistors and RF inductors.
Launch of industry’s smallest dual
3A/single 6A step-down power module
Fairchild launches new MOSFETs
rated for operation at 175°C
Fairchild Semiconductor has expanded its
line of Extended Temperature (ET) mid-
voltage MOSFETs, which can operate at
175°C. The higher operating temperature
enables power-system designers to achieve
as much as 85% higher power density, and
three times better reliability, than when using
MOSFETs rated to the 150°C industry
standard.
This new family of ET MOSFETs conforms
to the IPC-9592 power-conversion standard,
which means the maximum junction
temperature can be up to 150°C, as opposed
to 125°C for standard 150°C MOSFETs. The
devices are offered in 30V, 40V, 60V, 80V,
100V, 120V and 150V versions.
INTERSIL
Intersil has introduced the ISL8203M, a
dual 3A/single 6A step-down DC-DC
converter module with a footprint of
just 9.0mm x 6.5mm, the world’s
smallest for this type of device.
Offering efficiency up to 95% and excellent
thermal characteristics, the module provides
power-system designers with a high-
performance, easy-to-use solution for their low-
power, low-voltage applications.
The ISL8203M is a complete power system
which simplifies power-supply design for FPGAs,
ASICs, microprocessors, microcontrollers and
DSPs. It is housed in an encapsulated module
which includes a PWM controller, synchronous
switching MOSFETs, inductors and passive
components, producing a power supply which
supports an input-voltage range of 2.85V to 6V.
The ISL8203M’s adjustable output voltage of
0.8V to 5V enables designers to use just one
device to build either a single 6A or a dual-
output 3A power supply.
The ISL8203M power module offers best-in-
class thermal resistance of 15°C/W junction-to-
ambient when mounted on the device’s
evaluation board in free air. It can also supply a
6A output at an ambient temperature of 85°C
without the need for heat-sinks or a fan.
The module draws on Intersil's patented
technology and advanced packaging
techniques to deliver high power density,
allowing it to operate at full load over a wide
temperature range. The module also provides
over-temperature, over-current and under-
voltage lock-out protections, adding to its
robustness and reliability.
The ISL8203M power module is available in a
9mm x 6.5mm x 1.83mm QFN package.
PRODUCT
STAR
ENERGY
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
ams launches 4mm
2
integrated
power-management IC for
wearables
•
Power supplies for controllers,
•
•
•
APPLICATIONS
processors, FPGAs and DSPs
Routers and switchers
Test and measurement systems
Barcode readers
•
1.5ms internal digital soft start
•
External synchronisation up to 4MHz
•
Peak-current limiting and hiccup-mode
•
short-circuit protection
Over-current protection
FEATURES
ams has introduced the AS3701, an
integrated Power Management IC (PMIC)
with an especially small footprint, for use in
wearables and other space-constrained
devices.
The AS3701, a micro-PMIC with a low
quiescent current, implements multiple
power-regulation, power-saving, battery-
charging, protection and start-up functions
in a wafer-level chip-scale package
measuring just 2mm x 2mm x 0.4mm.
©Copyright 2015 Future Electronics Ltd. All trademarks contained herein are the
property of their respective owners. Applications for product samples, badge
boards, demonstration boards, Future Electronics’ boards and other advertised
materials from Future Electronics are offered subject to qualification.
150502:
FREE
BOARDS
For samples or pricing e-mail
info@my-ftm.com
Rapid power-system design for MPUs
and MCUs
For details, see Board of the Month on page 25.
Orderable Part Number:
ISL8203MEVAL2Z
150501:
2
For more information e-mail
info@my-ftm.com
Apply now at my-boardclub.com
Fast-track board request code: FTM55A
EMAIL INFO@My-FTM.COM FOR SAMPLES AND DATASHEETS
COMPONENT
FOCUS
Two new families of ARM Cortex-based MCUs
offer secure messaging and code protection
NXP SEMICONDUCTORS
NXP Semiconductors has added new
versions of two popular 32-bit
microcontroller families, bringing the
benefit of enhanced data and application
security to connected devices.
The new LPC18Sxx and LPC43Sxx MCUs,
based on the popular LPC1800 and LPC4300
series, will help embedded developers to
secure application code and data messages
against threats such as theft and cloning.
The new families add support for secure
boot and secure messaging to the list of
control, high-speed connectivity, display and
timing functions, as well as the flexible
peripheral features, for which the LPC1800 and
LPC4300 are known.
The LPC18Sxx and LPC43Sxx microcontroller
families are well suited to any connected
application, particularly hubs and gateways,
that must relay and/or bridge large volumes of
high-speed data. These functions are common
in products such as smart-meter
communications hubs, factory-, building- and
home-automation devices, streaming audio
products and automotive aftermarket products.
Both LPC18Sxx and LPC43Sxx families
incorporate an AES-128 encryption engine for
fast, secure bulk-message transfers.
They also offer:
• two 128-bit non-volatile OTP memories for
encrypted, hardware-randomised key storage
to prevent cloning
• a true random number generator for unique
key creation
• boot ROM drivers supporting secure boot of
authenticated encrypted firmware images
The MCUs in both families use high-performance
ARM
®
Cortex
®
-M cores which provide ample
bandwidth for fast bulk data encryption or
decryption without slowing down the flow of
traffic. The LPC18Sxx MCUs use an ARM
Cortex-M3 core, and the LPC43Sxx MCUs
have an ARM Cortex-M4F core with an ARM
Cortex-M0 co-processor.
ENERGY
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
•
•
•
•
•
•
•
APPLICATIONS
IoT equipment
Industry 4.0 devices
Smart meters
Communication hubs
Diagnostic equipment
Instrumentation
Medical and fitness equipment
•
Up to 1Mbyte of Flash
•
SPI Flash interface
•
8-/16-/32-bit external memory controller
•
Hi-Speed USB2.0 interface with
•
Dual CAN 2.0 interfaces
•
10/100 Ethernet interface
•
Graphic LCD driver at up to 1024 x 768
•
8-channel DMA controller
•
Two 8-channel, 10-bit, 400ksamples/s
•
•
•
•
ADCs
One 10-bit DAC
Two I²S interfaces (LPC18Sxx)
Audio PLL (LPC18Sxx)
Pin-compatible with LPC4300 series
microcontrollers
pixel resolution
on-chip PHy
FEATURES
150503:
LPC1800
150504:
LPC4300
FREE
BOARDS
For samples or
pricing e-mail
info@my-ftm.com
Enhanced data and application security
Both device families also include code-read
protection to prevent unauthorised access to
internal Flash memory.
Both the LPC18Sxx and the LPC43Sxx
MCU families are supported by software
solutions from ecosystem partners for secure
firmware updates, IoT connectivity and
networking stacks. In addition these new
MCUs may be paired with an NXP A-series
secure element for a turnkey solution which
provides for tamper detection, secure
authentication with hardware-accelerated RSA
and ECC keys, and secure certificate storage.
The LPC ecosystem also provides
developers using the LPC18Sxx and
LPC43Sxx with an extensive collection of tools
and drivers, and with access to forums for
sharing knowledge and answers to queries.
The LPCXpresso18S37 board features the LPC18S37 in
its 100-pin BGA package option. It provides a low-cost
development platform with a simplified Eclipse-based
development environment and an attached debugger.
Orderable Part Number:
OM13076
Apply now at my-boardclub.com
Fast-track board request code: FTM55A
FREE
BOARDS
Secure element and connectivity functions
The LPCXpresso43S37 board features the LPC43S37 in
its 100-pin BGA package option. It combines the MCU,
security software from ecosystem partners, an NXP
A-series secure element and support for connectivity
functions including Ethernet and Wi-Fi
®
.
Orderable Part Number:
OM13073
Apply now at my-boardclub.com
Fast-track board request code: FTM55A
VISIT THE ONLINE FTM MAGAZINE AT: WWW.My-FTM.COM
3
COMPONENT
FOCUS
The top-view devices are package-matched with
Vishay's VEMD2000X01 and VEMD2503X01
series IR detectors, while the side-view devices
are matched with the VEMD2xx3SLX01 and
VEMT2xx3SLX01 detectors.
Operating in a narrow spectral bandwidth
around the 940nm wavelength, the emitters
guarantee invisible IR radiation.
High-speed 940nm IR emitters help reduce
component count and system cost
VISHAy
Vishay Intertechnology has released a
new series of high-speed 940nm Infra-
Red (IR) emitters which offer much
higher radiant intensity than standard
emitters. This higher light output helps
system designers to improve
performance, reduce component count
and cut bill-of-materials costs in new
designs.
The new IR emitters benefit from Vishay
Semiconductors’ SurfLight
™
surface emitter
chip technology. Unlike standard IR emitters,
which emit light in all directions, Vishay's
SurfLight devices emit nearly all the light and
power out of the top of the chip.
Radiant
Intensity
(mW/sr)
600
10
15
120
82
Angle of Half
Intensity (°)
±3
±60
±60
±10
±9
Forward
Voltage (V)
1.65
1.45
1.44
1.55
1.32
Radiant
Power (mW)
55
50
55
55
40
Since most of the light is concentrated at the
surface, the emitters achieve a much higher
radiant intensity, as much as five times greater
than that of standard IR emitters.
Vishay supplies the IR emitters in a range of
package types suited to different system designs.
ENERGY
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
•
•
•
•
•
•
•
APPLICATIONS
CCTV
Night-vision systems
Gaming equipment
Smoke detectors
Light curtains
Proximity sensors
IR touch panels
•
AEC-Q101 qualified
Package (mm)
T-1 (5)
0805 (2 x 1.25 x 0.85)
PLCC-2 (3.5 x 2.8 x 1.75)
Top-view with lens (2.3 x 2.3 x 2.8)
Side-view with lens (3.2 x 2.51 x 1.2)
FEATURES
Part Number
VSLY5940
VSMY1940X01
VSMY3940X01
VSMY2940G/RG
VSMY14940
•
•
•
(VSMy1940X01 and VSMy3940X01)
10ns rise and fall times
Suitable for high pulse currents
Floor life up to four weeks
150505:
For samples or pricing e-mail
info@my-ftm.com
40V gate driver minimises IGBT and MOSFET
switching losses
DIODES INCORPORATED
Intended as a switch for high-power
IGBTs and Silicon Carbide (SiC)
MOSFETs, the ZXGD3006E6 gate
driver from Diodes Incorporated helps
to increase power-conversion efficiency
in applications such as DC-DC
converters and motor drives.
The gate driver typically provides a drive
current of 4A for an input current of 1mA,
making it an ideal high-gain buffer stage
between the high output impedance of a
controller and the low input impedance of the
IGBT or SiC MOSFET. Featuring an emitter-
follower configuration, the ZXGD3006E6 is
inherently resistant to latch-up and shoot-
through problems, has a quiescent current of
less than 50nA, and operates with propagation
delay times of less than 10ns.
The ZXGD3006E6’s wide 40V operating-
voltage range allows full enhancement of the
switching device to minimise on-state power
losses, and permits 20V to -18V gate driving to
prevent dV/dt-induced false triggering of IGBTs.
To enable circuit designers to better define the
switching characteristics for their application,
the gate driver offers separate source and sink
outputs for independent control of rise and fall
times. Combined with the ability to handle 10A
peak currents, this allows for controlled charge
and discharge of large gate capacitive loads,
which reduces the risk of EMI problems and
cross-conduction at high operating frequencies.
Delivering higher pulse currents than
competing devices, this rugged SOT26-
packaged gate driver ensures heat dissipation
is kept to a minimum, resulting in high
reliability. In addition, the device’s pin-out
makes for a relatively simple PCB layout, and
reduces parasitic trace inductances.
WORKING PARTNER
Vishay’s VS-E series: page 19
Littelfuse’ IGBT Module: page 24
ENERGY
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
•
•
•
•
•
APPLICATIONS
DC-DC converters in electric cars
Active suspension systems
Solar inverters
Power supplies
Motor drives
•
Wide 40V operating-voltage range
•
Qualified to AEC-Q101 automotive quality
standard
FEATURES
150506:
ZXGD3006E6: propagation delay is less than 10ns
For samples or pricing e-mail
info@my-ftm.com
4
EMAIL INFO@My-FTM.COM FOR SAMPLES AND DATASHEETS
COMPONENT
FOCUS
Power MOSFETs with Super Junction technology offer
high efficiency and power density
VISHAy
Vishay Intertechnology’s 650V E series
power MOSFETs enable power-system
designers to achieve high power density
in applications carrying currents ranging
from 6A to 105A.
Breakdown
Voltage (V)
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
650
Maximum
Drain Current at
25°C (A)
6
6
6
6
6
12
12
12
15
15
15
22
22
22
22
24
24
24
28
28
28
47
47
65
65
105
Based on the latest Vishay Siliconix Super
Junction technology, the N-channel E series
MOSFETs offer extended head room in
applications that require a large input-voltage
safety margin.
The devices, available in eight different
package options, combine low on-resistance
and low gate charge, resulting in extremely low
conduction and switching losses.
Maximum
On-resistance at
10V (mΩ)
600
600
600
600
600
380
380
380
280
280
280
180
180
180
180
150
150
150
125
125
125
70
70
51
51
30
Typical Gate
Charge at 10V
(nC)
21
21
21
21
21
33
33
33
44
44
44
65
65
65
65
83
83
83
99
99
99
178
178
244
244
405
These characteristics enable designers to save
energy in many high-power, high-performance
switch-mode power supplies.
The devices are designed to withstand high
energy pulses in avalanche and commutation
modes.
Part Number
SiHP6N65E
SiHF6N65E
SiHB6N65E
SiHD6N65E
SiHU6N65E
SiHP12N65E
SiHB12N65E
SiHF12N65E
SiHP15N65E
SiHB15N65E
SiHF15N65E
SiHP22N65E
SiHF22N65E
SiHB22N65E
SiHG22N65E
SiHP24N65E
SiHB24N65E
SiHG24N65E
SiHP28N65E
SiHG28N65E
SiHW28N65E
SiHG47N65E
SiHW47N65E
SiHG64N65E
SiHW64N65E
SiHS105N65E
Package
TO220
TO220F
TO263 (D
2
PAK)
TO252 (DPAK)
TO251 (IPAK)
TO220
TO263 (D
2
PAK)
TO220F
TO220
TO263 (D
2
PAK)
TO220F
TO220
TO220F
TO263 (D
2
PAK)
TO247AC
TO220
TO263 (D
2
PAK)
TO247AC
TO220
TO247AC
TO247AD
TO247AC
TO247AD
TO247AC
TO247AD
Super TO247
ENERGY
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
Vishay’s E series MOSFETs: low conduction and switching losses
WORKING PARTNER
Hirose’s FX23: page 13
•
•
•
•
•
•
APPLICATIONS
Server and telecoms power supplies
Switch-mode power supplies
PFC power supplies
Lighting equipment
High-voltage industrial equipment
PV inverters
•
Low input capacitance
•
30V maximum gate-source voltage
•
Operating temperature range:
-55°C to 150°C
FEATURES
150507:
For samples or pricing e-mail
info@my-ftm.com
60V MOSFET in high-temperature LFPAK33 package
NXP SEMICONDUCTORS
NXP Semiconductors has introduced
the PSMN011-60MS, an enhancement-
mode N-channel 60V MOSFET in an
LFPAK33 package. It is intended for use
in a wide range of industrial, comm-
unications and domestic equipment.
Qualified for operation at high temperatures up
to 175°C, the device is particularly well suited
to use in circuits providing a standard-level
gate-drive source. Its LFPAK33 package’s
footprint is compatible with that of other 3.3mm
package types, making it straightforward for
designers to replace an older MOSFET with the
PSMN011-60MS when upgrading power-
system designs.
The PSMN011-60MS is notable for its low
switching and conduction losses, which
contribute to high system efficiency.
On-resistance at 10V/15A is 9.6mΩ, and total
gate charge is rated at 23nC.
ENERGY
INDUSTRIAL
LIGHTING
MEDICAL
AUTOMOTIVE SECURITY
CONSUMER TELECOMMS
•
•
•
APPLICATIONS
AC-DC converters
Synchronous rectification
DC-DC converters
•
Handles 48.1mJ non-repetitive avalanche
•
•
•
energy
1.44K/W thermal resistance (junction to
mounting base)
8ns rise time
9ns fall time
FEATURES
150508:
PSMN011-60MS: ideal replacement for older MOSFETs
For samples or pricing e-mail
info@my-ftm.com
VISIT THE ONLINE FTM MAGAZINE AT: WWW.My-FTM.COM
5

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