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DS1100
5-Tap Economy Timing
Element (Delay Line)
www.dalsemi.com
FEATURES
§
§
§
§
§
§
§
§
§
§
§
All-silicon timing circuit
5-taps equally spaced
Delays are stable and precise
Both leading and trailing edge accuracy
Improved replacement for DS1000
Low-power CMOS
TTL/CMOS-compatible
Vapor phase, IR and wave solderable
Custom delays available
Fast turn prototypes
Delays specified over both commercial and
industrial temperature ranges
PIN ASSIGNMENT
IN
TAP 2
TAP 4
GND
1
2
3
4
8
7
6
5
V
CC
TAP 1
TAP 3
TAP 5
DS1100M 8-PIN DIP (300 MIL)
DS1100Z 8-PIN SOIC (150 MIL)
DS1100U 8-PIN MICRO-SOP
PIN DESCRIPTION
TAP 1-TAP 5
V
CC
GND
IN
- TAP Output Number
- +5 Volts
- Ground
- Input
DESCRIPTION
The DS1100 series delay lines have five equally spaced taps providing delays from 4 ns to 300 ns. These
devices are offered in 8-pin DIPs and surface mount packages to save PC board area. Low cost and
superior reliability over hybrid technology is achieved by the combination of a 100% silicon delay line
and industry standard DIP and SOIC packaging. The DS1100 5-Tap Silicon Delay Line reproduces the
input logic state at the output after a fixed delay as specified by the extension of the part number after the
dash. The DS1100 is designed to reproduce both leading and trailing edges with equal precision. Each tap
is capable of driving up to ten 74LS loads.
Dallas Semiconductor can customize standard products to meet special needs. For special requests and
rapid delivery, call (972) 371-4348.
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101299
DS1100
LOGIC DIAGRAM
Figure 1
DS1100 PART NUMBER DELAY TABLE (all values in ns)
Table 1
PART #
DS1100
-20
-25
-30
-35
-40
-45
-50
-60
-75
-100
-125
-150
-175
-200
-250
-300
TAP 1
4
5
6
7
8
9
10
12
15
20
25
30
35
40
50
60
NOMINAL DELAYS
TAP 2
TAP 3
8
12
10
15
12
18
14
21
16
24
18
27
20
30
24
36
30
45
40
60
50
75
60
90
70
105
80
120
100
150
120
180
TAP 4
16
20
24
28
32
36
40
48
60
80
100
120
140
160
200
240
TAP 5
20
25
30
35
40
45
50
60
75
100
125
150
175
200
250
300
TIMING DIAGRAM: SILICON DELAY LINE
Figure 2
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DS1100
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
Short Circuit Output Current
-1.0V to +7.0V
-40°C to +85°C
-55°C to +125°C
260°C for 10 seconds
50 mA for 1 second
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
High Level
Input Voltage
Low Level
Input Voltage
Input Leakage
Current
Active Current
High Level
Output Current
Low Level
Output Current
SYM
V
CC
V
IH
V
IL
I
I
I
CC
I
OH
I
OL
0.0V
≤
V
I
≤
V
CC
V
CC
=Max; Period=Min.
V
CC
=Min. V
OH
=4
V
CC
=Min. V
OL
=0.5
12
TEST CONDITION
(-40°C to +85°C; V
CC
= 5.0V ± 5%)
MIN
4.75
2.2
-0.5
-1.0
30
TYP
5.00
MAX
5.25
V
CC
= 0.5
0.8
1.0
50
-1
UNITS
V
V
V
uA
mA
mA
mA
6, 8
NOTES
5
5
5
AC ELECTRICAL CHARACTERISTICS
PARAMETER
Input
Pulse Width
Input-to-Tap
Delay Tolerance
(Delays
≤
40 ns)
Input-to-Tap
Delay Tolerance
(Delays > 40 ns)
Power-up Time
Input Period
SYM
t
WI
t
PLH
t
PHL
t
PLH
t
PHL
t
PU
Period
25°C 5V
0°C to 70°C
-40°C to +85°C
25°C 5V
0°C to 70°C
-40°C to +85°C
2(t
WI
)
TEST CONDITION
MIN
20% of
Tap 5
t
PLH
-2
-3
-4
-5
-3
-8
(T
A
= 25°C; V
CC
= 5V ± 5%)
TYP
MAX
UNITS
ns
Table 1
Table 1
Table 1
Table 1
Table 1
Table 1
+2
+3
+4
+5
+3
+8
200
ns
ns
ns
%
%
%
us
ns
1, 3, 4, 7
1, 2, 3, 4, 7
1, 2, 3, 4, 7
1, 3, 4, 7
1, 2, 3, 4, 7
1, 2, 3, 4, 7
NOTES
CAPACITANCE
PARAMETER
Input Capacitance
SYMBOL
C
IN
MIN
TYP
5
MAX
10
UNITS
pF
(T
A
= 25°C)
NOTES
3 of 6
DS1100
NOTES:
1. Initial tolerances are ± with respect to the nominal value at 25°C and 5V for both leading and trailing
edge.
2. T & V tolerance is with respect to the actual measured (at 25° C and 5V) delay value over the stated
temperature range, and a supply voltage range of 4.75 to 5.25V.
3. All tap delays tend to vary unidirectionally with temperature or voltage changes. For example, if TAP
1 slows down, all other taps also slow down; TAP3 can never be faster than TAP2.
4. Intermediate delay values are available on a custom basis. For further information, call (972) 371-
4348.
5. All voltages are referenced to ground.
6. Measured with outputs open.
7. See “Test Conditions” section at the end of this data sheet.
8. I
CC
values apply to a -20 operating at 1MHz. Longer delays will consume less current.
TESTCIRCUIT
Figure 3
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DS1100
TERMINOLOGY
Period:
The time elapsed between the leading edge of the first pulse and the leading edge of the
following pulse.
t
WI
(Pulse Width):
The elapsed time on the pulse between the 1.5V point on the leading edge and the
1.5V point on the trailing edge or the 1.5V point on the trailing edge and the 1.5V point on the leading
edge.
t
RISE
(Input Rise Time):
The elapsed time between the 20% and the 80% point on the leading edge of the
input pulse.
t
FALL
(Input Fall Time):
The elapsed time between the 80% and the 20% point on the trailing edge of the
input pulse.
t
PLH
(Time Delay, Rising):
The elapsed time between the 1.5V point on the leading edge of the input
pulse and the 1.5V point on the leading edge of any tap output pulse.
t
PHL
(Time Delay, Falling):
The elapsed time between the 1.5V point on the trailing edge of the input
pulse and the 1.5V point on the trailing edge of any tap output pulse.
TEST SETUP DESCRIPTION
Figure 3 illustrates the hardware configuration used for measuring the timing parameters on the DS1100.
The input waveform is produced by a precision pulse generator under software control. Time delays are
measured by a time interval counter (20 ps resolution) connected between the input and each tap. Each
tap is selected and connected to the counter by a VHF switch control unit. All measurements are fully
automated, with each instrument controlled by a central computer over an IEEE 488 bus.
TEST CONDITIONS INPUT :
Ambient Temperature:
Supply Voltage (V
CC
):
Input Pulse:
Source Impedance:
Rise and Fall Time:
Pulse Width:
Period:
25°C ± 3°C
5.0V ± 0.1V
High = 3.0V ± 0.1V
Low = 0.0V ± 0.1V
50 Ohm Max.
3.0 ns Max. (measured between 0.6V and 2.4V)
500 ns
1 µs
OUTPUT:
Each output is loaded with the equivalent of one 74F04 input gate. Delay is measured at the 1.5V level on
the rising and falling edge.
NOTE:
Above conditions are for test only and do not restrict the operation of the device under other data sheet
conditions.
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