PBYR1625.pdf

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Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
GENERAL DESCRIPTION
Dual nickel silicide schottky barrier
rectifier diodes in a plastic envelope
featuring low forward voltage drop
and absence of stored charge. These
devices can withstand reverse
voltage
transients
and
have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies with
3 V - 3.3 V outputs, or as or-ing
diodes in fault tolerant power supply
systems.
PBYR2525CT series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
PARAMETER
PBYR25-
Repetitive peak reverse
voltage
Forward voltage
Average output current (both
diodes conducting)
MAX.
20CT
20
0.41
30
MAX.
25CT
25
0.41
30
UNIT
V
V
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a1
1
k2
1 23
a2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-20
20
20
20
30
43
30
180
200
MAX.
-25
25
25
25
UNIT
V
V
V
A
A
A
A
A
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T
mb
≤
109 ˚C
Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current, per diode
square wave;
δ
= 0.5;
T
mb
≤
135 ˚C
I
2
t
I
RRM
I
RSM
T
stg
T
j
t = 25
µs; δ
= 0.5;
T
mb
≤
135 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal T
j
= 125 ˚C prior
to surge; with reapplied
V
RRM(max)
I
2
t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
-
-
-
-65
-
162
2
2
175
150
A
2
s
A
A
˚C
˚C
January 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
in free air
PBYR2525CT series
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.5
1.0
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
C
d
PARAMETER
Forward voltage (per diode)
Reverse current (per diode)
Junction capacitance (per
diode)
CONDITIONS
I
F
= 15 A; T
j
= 125˚C
I
F
= 30 A; T
j
= 125˚C
I
F
= 30 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
f = 1MHz; V
R
= 5V; T
j
= 25 ˚C to
125 ˚C
MIN.
-
-
-
-
-
-
TYP.
0.33
0.43
0.51
2.0
30
900
MAX.
0.41
0.50
0.60
10
80
-
UNIT
V
V
V
mA
mA
pF
January 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
PBYR2525CT series
12
10
8
6
4
2
PF / W
Vo = 0.27 V
Rs = 0.00875 Ohms
PBYR1625
Tmb(max) / C
D = 1.0
0.5
132
135
138
141
10000
Cd / pF
PBYR1625
0.1
0.2
1000
I
t
p
D=
t
p
T
t
144
147
T
0
0
5
10
15
IF(AV) / A
20
150
25
100
1
10
VR / V
100
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PBYR1625
Fig.4. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
50
IF / A
Tj = 25 C
Tj = 125 C
Zth j-mb (K/W)
10
40
typ
30
max
1
20
0.1
10
P
D
t
p
t
0
0
0.2
0.4
VF / V
0.6
0.8
1
0.01
10us
1ms
tp / s
0.1s
10s
Fig.2. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
PBYR1625
Fig.5. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
1A
100mA
IR / A
150 C
125 C
10mA 100 C
1mA
100uA
Tj = 25 C
10uA
1uA
0
5
10
VR / V
15
20
25
75 C
50 C
Fig.3. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
January 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
PBYR2525CT series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.6. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
January 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
PBYR2525CT series
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1997
5
Rev 1.000

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