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TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1999, Power Innovations Limited, UK
JANUARY 1999 - REVISED MAY 1999
TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS
q
Ion-Implanted Breakdown Region
- Precise DC and Dynamic Voltages
DEVICE
‘3070
‘3080
‘3095
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
V
DRM
V
58
65
75
100
110
120
145
160
190
220
275
V
(BO)
V
70
80
95
125
135
145
180
210
250
290
350
SL PACKAGE
(TOP VIEW)
T
G
R
1
2
3
MDXXAG
device symbol
T
R
q
Rated for International Surge Wave Shapes
- Guaranteed -40 °C to +85 °C Performance
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/700 µs
10/560 µs
10/1000 µs
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
TSP
A
500
300
250
200
160
100
SD3XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
q
3-Pin Through-Hole Packaging
- Compatible with TO-220AB pin-out
- Low Height. . . . . . . . . . . . . . . . . . . . .8.3 mm
Low Differential Capacitance
- Value at -2 V/-50 V Bias. . . . . . . .67 pF max.
q
description
The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground.
Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or
conducted on to the telephone line.
The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
This TISP3xxxH3SL range consists of eleven voltage variants to meet various maximum system voltage
levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning
surges in both polarities. These high current protection devices are in a 3-pin single-in-line (SL) plastic
package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in
SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A
10/1000 TISP3xxxF3SL series is available.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and
matched breakover control and are virtually transparent to the system in normal operation.
PRODUCT
INFORMATION
1
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
absolute maximum ratings, T
A
= 25°C (unless otherwise noted)
RATING
‘3070
‘3080
‘3095
‘3125
‘3135
Repetitive peak off-state voltage, (see Note 1)
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
Exponential current ramp, Maximum ramp value < 200 A
di
T
/dt
T
J
T
stg
I
TSM
55
60
1
400
-40 to +150
-65 to +150
A/µs
°C
°C
A
I
TSP
500
300
250
220
200
200
200
200
160
100
A
V
DRM
SYMBOL
VALUE
± 58
± 65
± 75
±100
±110
±120
±145
±160
±190
±220
±275
V
UNIT
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the TISP3xxxH3SL must be in thermal equilibrium.
3. These non-repetitive rated currents are peak values of either polarirty. The rated current values may be applied to the R or T
terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G
terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the
TISP3xxxH3SL returns to its initial conditions.
4. See Figure 10 for impulse current ratings at other temperatures. Above 85 °C, derate linearly to zero at 150 °C lead temperature.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for
simulateous operation. In this condition, the G terminal current will be 2xI
TSM(t)
, the sum of the R and T terminal currents. Derate
current values at -0.61 %/°C for ambient temperatures above 25 °C.
PRODUCT
2
INFORMATION
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
electrical characteristics for the R and G or T and G terminals, T
A
= 25°C (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
TEST CONDITIONS
T
A
= 25°C
T
A
= 85°C
‘3070
‘3080
‘3095
‘3125
‘3135
V
(BO)
Breakover voltage
dv/dt = ±750 V/ms,
R
SOURCE
= 300
Ω
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
‘3070
‘3080
‘3095
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
V
(BO)
Impulse breakover
voltage
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±750 V/ms,
R
SOURCE
= 300
Ω
±0.15
±0.15
±5
T
A
= 85°C
V
d
= 1 V rms, V
D
= 0,
‘3070 thru ‘3095
‘3125 thru ‘3210
‘3250 thru ‘3350
f = 100 kHz,
V
d
= 1 V rms, V
D
= -1 V
‘3070 thru ‘3095
‘3125 thru ‘3210
‘3250 thru ‘3350
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 1 V rms, V
D
= -2 V
‘3070 thru ‘3095
‘3125 thru ‘3210
‘3250 thru ‘3350
f = 100 kHz,
V
d
= 1 V rms, V
D
= -50 V
‘3070 thru ‘3095
‘3125 thru ‘3210
‘3250 thru ‘3350
f = 100 kHz,
(see Note 6)
NOTE
6: To avoid possible voltage clipping, the ‘3125 is tested with V
D
= -98 V.
V
d
= 1 V rms, V
D
= -100 V
‘3125 thru ‘3210
‘3250 thru ‘3350
±10
170
90
84
150
79
67
140
74
62
73
35
28
33
26
pF
I
T
= ±5 A, t
W
= 100 µs
I
T
= ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
= ±50 V
f = 100 kHz,
MIN
TYP
MAX
±5
±10
±70
±80
±95
±125
±135
±145
±180
±210
±250
±290
±350
±78
±88
±103
±134
±144
±154
±189
±220
±261
±302
±362
±0.6
±3
±0.6
A
V
A
kV/µs
µA
V
V
UNIT
µA
PRODUCT
INFORMATION
3
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
electrical characteristics for the R and T terminals, T
A
= 25°C
PARAMETER
I
DRM
Repetitive peak off-
state current
V
D
= 2V
DRM
‘3070
‘3080
‘3095
‘3125
‘3135
V
(BO)
Breakover voltage
dv/dt = ±750 V/ms,
R
SOURCE
= 300
Ω
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
‘3070
‘3080
‘3095
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
V
(BO)
Impulse breakover
voltage
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
TEST CONDITIONS
MIN
TYP
MAX
±5
±140
±160
±190
±250
±270
±290
±360
±420
±500
±580
±700
±156
±176
±206
±268
±288
±308
±378
±440
±252
±604
±724
V
V
UNIT
µA
thermal characteristics
PARAMETER
R
θJA
Junction to free air thermal resistance
TEST CONDITIONS
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 °C, (see Note 7)
MIN
TYP
MAX
50
UNIT
°C/W
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PRODUCT
4
INFORMATION
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BO)
I
(BO)
-v
I
DRM
V
DRM
V
D
I
D
I
D
V
D
V
DRM
I
DRM
+v
I
(BO)
V
(BO)
I
H
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
V
D
= ±50 V and I
D
= ±10 µA
used for reliability release
PM4XAAC
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINAL PAIRS
PRODUCT
INFORMATION
5

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