IRF9501 zamiennik N kan mosfet.pdf

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IRFD020, SiHFD020
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
24
7.1
7.1
Single
D
FEATURES
50
0.10
• For Automatic Insertion
• Compact, End Stackable
• Fast Switching
• Ease of Paralleling
• Excellent Temperature Stability
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
HVMDIP
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards for computers, printers, telecommunications
equipment, and consumer products. Their compatibility with
automatic insertion equipment, low-profile and end
stackable features represent the stat-of-the-art in power
device packaging.
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HVMDIP
IRFD020PbF
SiHFD020-E3
IRFD020
SiHFD020
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
a
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
Linear Derating Factor
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche
Maximum Power Dissipation
Current)
c
T
C
= 25 °C
for 10 s
L = 100 μH
I
LM
I
L
P
D
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
50
± 20
2.4
1.5
19
0.0080
19
2.2
1.0
- 55 to + 150
300
d
W/°C
A
W
°C
A
UNIT
V
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. T
J
= 25 °C to 150 °C
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V
DD
= 25 V, starting T
J
= 25 °C, L = 100 μH, R
g
= 25
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91465
S11-0915-Rev. A, 16-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
R
thJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State
Resistance
b
Forward Transconductance
b
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
c
Body Diode Voltage
a
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= max. rating, V
GS
= 0 V
V
DS
= max. rating x 0.8, V
GS
= 0 V, T
C
= 125
V
GS
= 10 V
V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)
max.
I
D
= 1.4 A
50
2.0
-
-
-
2.4
-
4.9
-
-
-
-
-
-
0.080
7.3
-
4.0
± 500
250
1000
-
0.10
-
V
V
nA
μA
A
S
V
DS
= 20 V, I
D
= 7.5 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz
-
-
-
-
400
260
44
16
4.7
4.7
8.7
55
16
26
4.0
6.0
-
-
-
24
7.1
7.1
13
83
24
39
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 15 A,
V
DS
= max. rating x 0.8
-
-
-
V
DD
= 25 V, I
D
= 15 A,
R
g
= 18
,
R
D
= 1.7
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
57
0.17
-
-
-
130
0.34
2.4
A
19
1.4
310
0.85
V
ns
μC
G
S
T
C
= 25 °C, I
S
= 2.4 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= 15 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
c. V
DD
= 25 V, starting T
J
= 25 °C, L = 100 μH, R
g
= 25
www.vishay.com
2
Document Number: 91465
S11-0915-Rev. A, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91465
S11-0915-Rev. A, 16-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91465
S11-0915-Rev. A, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig. 11 - Typical Transconductance vs. Drain Current
Document Number: 91465
S11-0915-Rev. A, 16-May-11
Fig. 12 - Breakdown Voltage vs. Temperature
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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