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QRE1113, QRE1113GR — Minature Reflective Object Sensor
August 2011
QRE1113, QRE1113GR
Minature Reflective Object Sensor
Features
■
Phototransistor output
■
No contact surface sensing
■
Miniature package
■
Lead form style: Gull Wing
■
Two leadform options: Through hole (QRE1113)
SMT gullwing (QRE1113GR)
■
Two packaging options: Tube (QRE1113)
Tape and reel (QRE1113GR)
QRE1113GR Package Dimensions
2.90
2.50
1.00
4
3
0.94
C
L
0.60
0.40
1.80
C
L
3.60
3.20
0.94
1
2
30°
0.40
1.70
1.50
0.61 Nom.
(4x)
4.80
4.40
1.10
0.90
Notes:
1. Dimensions for all drawings are in millimeters.
2. Tolerance of ±0.15mm on all non-nominal dimensions
©2011 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.7.0
www.fairchildsemi.com
QRE1113, QRE1113GR — Minature Reflective Object Sensor
QRE1113 Package Dimensions
2.90
2.50
1.00
4
3
0.94
C
L
0.60
0.40
1.80
C
L
3.60
3.20
0.94
1
2
4.20
3.80
0.40
1.70
1.50
10.4
8.4
0~20°
0~20°
Notes:
1. Dimensions for all drawings are in millimeters.
2. Tolerance of ±0.15mm on all non-nominal dimensions
Schematic
1
2
3
4
Pin 1: Anode
Pin 2: Cathode
Pin 3: Collector
Pin 4: Emitter
©2011 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.7.0
www.fairchildsemi.com
2
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
EMITTER
I
F
V
R
I
FP
P
D
SENSOR
V
CEO
V
ECO
I
C
P
D
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Peak Forward Current
(5)
Power Dissipation
(1)
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power
Dissipation
(1)
Rating
-40 to +85
-40 to +90
240 for 5 sec
260 for 10 sec
50
5
1
75
30
5
20
50
Units
°C
°C
°C
°C
mA
V
A
mW
V
V
mA
mW
Electrical/Optical Characteristics
(T
A
= 25°C unless otherwise specified)
Symbol
V
F
I
R
λ
PE
I
D
COUPLED
I
C(ON)
I
CX
V
CE (SAT)
t
r
t
f
On-State Collector Current
Cross-Talk Collector Current
Saturation Voltage
Rise Time
Fall Time
V
CC
= 5V, I
C(ON)
= 100µA,
R
L
= 1k
Ω
20
20
I
F
= 20mA, V
CE
= 5V
(6)
I
F
= 20mA, V
CE
= 5V
(7)
0.10
0.40
1
0.3
mA
µA
V
µs
Parameter
Forward Voltage
Reverse Leakage Current
Peak Emission Wavelength
Collector-Emitter Dark Current
Test Conditions
I
F
= 20mA
V
R
= 5V
I
F
= 20mA
I
F
= 0mA, V
CE
= 20V
Min.
Typ.
1.2
940
Max.
1.6
10
Units
V
µA
nm
INPUT DIODE
OUTPUT TRANSISTOR
100
nA
Notes:
1. Derate power dissipation linearly 1.00mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) from housing.
5. Pulse conditions: tp = 100µs; T = 10ms.
6. Measured using an aluminum alloy mirror at d = 1mm.
7. No reflective surface at close proximity.
©2011 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.7.0
www.fairchildsemi.com
3
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Typical Performance Curves
I
C (ON)
- NORMALIZED COLLECTOR CURRENT
1.0
1.0
I
F
= 10 mA
V
CE
= 5 V
T
A
= 25˚C
0.8
I
C (ON)
-
COLLECTOR CURRENT
(mA)
0.8
d 0
0.6
0.6
0.4
Sensing Object:
White Paper (90% reflective)
0.2
Mirror
0.4
0.2
0.0
0
1
2
3
4
5
0.0
0
4
8
12
16
20
d-DISTANCE (mm)
I
F
- FORWARD CURRENT (mA)
Fig. 1 Normalized Collector Current vs. Distance
between device and reflector
Fig. 2 Collector Current vs. Forward Current
I
C (ON)
- NORMALIZED COLLECTOR CURRENT
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
d = 1 mm, 90% reflection
T
A
= 25˚C
I
CEO
- NORMALIZED DARK CURRENT
2.0
10
2
Normalized to:
V
CE
= 10 V
T
A
= 25˚C
10
1
V
CE
= 10 V
V
CE
= 5 V
I
F
= 25mA
I
F
=20mA
I
F
=15mA
I
F
=10mA
I
F
=5mA
10
0
10
-1
0.2
0.0
0.1
1
10
10
-2
25
40
55
70
85
V
CE
- COLLECTOR EMITTER VOLTAGE (V)
T
A
- Ambient Temperature (˚C)
Fig. 3 Normalized Collector Current vs.
Collector to Emitter Voltage
Fig. 4 Collector Emitter Dark Current (Normalized)
vs. Ambient Temperature
©2011 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.7.0
www.fairchildsemi.com
4
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Typical Performance Curves
(Continued)
50
100
T
A
= 25˚C
40
V
CC
= 10 V
t
pw
= 100 us
T=1ms
T
A
= 25˚C
I
C
= 0.3 mA
I
F
- FORWARD CURRENT (mA)
RISE AND FALL TIME (us)
t
f
t
r
10
t
f
t
r
30
20
I
C
= 1 mA
10
0
1.0
1.1
1.2
1.3
1.4
1.5
1
0.1
1
10
V
F
- FORWARD VOLTAGE (V)
R
L
- LOAD RESISTANCE (KΩ)
Fig. 6 Forward Current vs. Forward Voltage
Fig. 7 Rise and Fall Time vs. Load Resistance
3.0
V
F
- FORWARD VOLTAGE (V)
RELATIVE RADIANT INTENSITY
2.5
1.0
0.9
0.8
2.0
I
F
= 50 mA
I
F
= 20 mA
1.0
I
F
= 10 mA
1.5
0.7
0.5
0.0
-40
-20
0
20
40
60
80
0.6
0.4
0.2
0
0.2
0.4
0.6
T
A
- AMBIENT TEMPERATURE (˚C)
ANGULAR DISPLACEMENT
Fig. 8
Forward Voltage vs. Ambient Temperature
Fig. 8 Radiation Diagram
©2011 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.7.0
www.fairchildsemi.com
5

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