BAT86_2.pdf

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DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D050
BAT86
Schottky barrier diode
Product specification
Supersedes data of 1996 Mar 20
2000 May 25
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Low forward voltage
•
Guard ring protected
•
Hermetically-sealed leaded glass
package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes.
DESCRIPTION
BAT86
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
k
handbook, halfpage
a
MAM193
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
F(AV)
PARAMETER
continuous reverse voltage
continuous forward current
average forward current
CONDITIONS
−
−
PCB mounting, lead length = 4 mm;
−
V
RWM
= 25 V; a = 1.57;
δ
= 0.5;
T
amb
= 50
°C;
see Fig.2
t
p
≤
1 s;
δ ≤
0.5
t
p
≤
10 ms
−
−
−65
−
−65
MIN.
MAX.
50
200
200
V
mA
mA
UNIT
I
FRM
I
FSM
T
stg
T
j
T
amb
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
500
5
+150
125
+125
mA
A
°C
°C
°C
2000 May 25
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
t
rr
reverse current
reverse recovery time
V
R
= 40V; see Fig.4; note 1
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.6
f = 1 MHz; V
R
= 1 V; see Fig.5
300
380
450
600
900
5
4
CONDITIONS
MAX.
BAT86
UNIT
mV
mV
mV
mV
mV
µA
ns
C
d
Note
diode capacitance
8
pF
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD68 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
320
UNIT
K/W
2000 May 25
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
BAT86
MRA540
250
handbook, halfpage
I F(AV)
(mA)
200
10
3
handbook, halfpage
IF
(mA)
10
2
(1) (2) (3)
MLD357
150
10
100
(1)
(2) (3)
1
50
0
0
50
100
Tamb ( C)
o
150
10
−1
0
0.4
0.8
VF (V)
1.2
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.3
Fig.2 Derating curve.
Forward current as a function of forward
voltage; typical values.
MGC686
10
5
handbook, halfpage
IR
(nA)
4
10
MGC687
(1)
handbook, halfpage
12
Cd
(pF)
(2)
8
10
3
10
2
10
(3)
1
10
−1
4
0
0
10
20
30
40
VR (V)
50
0
10
20
30
40
VR (V)
50
(1) T
amb
= 85
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
f = 1 MHz.
Fig.4
Reverse current as a function of reverse
voltage; typical values.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
2000 May 25
4
Philips Semiconductors
Product specification
Schottky barrier diode
BAT86
handbook, halfpage
I
F
dI F
dt
10% t
Qr
90%
IR
tf
MRC129 - 1
Fig.6 Reverse recovery definitions.
2000 May 25
5

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