BAX18.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAX18
General purpose diode
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 18
Philips Semiconductors
Product specification
General purpose diode
FEATURES
•
Hermetically sealed leaded glass
SOD27 (DO-35) package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 2 A.
The diode is type branded.
handbook, halfpage
k
BAX18
DESCRIPTION
The BAX18 is a general purpose diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
a
MAM246
APPLICATIONS
•
Rectifier applications.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t = 10 ms
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
55
15
9
450
+200
200
A
A
A
mW
°C
°C
see Fig.2; note 1
CONDITIONS
MIN.
−
−
−
−
MAX.
75
75
500
2000
V
V
mA
mA
UNIT
1996 Sep 18
2
Philips Semiconductors
Product specification
General purpose diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 300 mA
I
F
= 2 A; T
j
= 150
°C
I
R
reverse current
see Fig.5
V
R
= 75 V
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA; see Fig.7
−
−
−
−
5
100
35
50
−
−
1.0
1.5
CONDITIONS
MIN.
MAX.
BAX18
UNIT
V
V
µA
µA
pF
ns
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
VALUE
240
375
UNIT
K/W
K/W
1996 Sep 18
3
Philips Semiconductors
Product specification
General purpose diode
GRAPHICAL DATA
MBG455
BAX18
handbook, halfpage
500
IF
(mA)
400
handbook, halfpage
3
MBG467
IF
(A)
(1) (2)
(3)
(4)
2
300
200
1
100
0
0
100
Tamb
(
o
C)
200
0
0
(1) T
j
= 175
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 150
°C;
maximum values.
(4) T
j
= 25
°C;
maximum values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG702
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 18
4
Philips Semiconductors
Product specification
General purpose diode
BAX18
10
4
handbook, full pagewidth
MBG697
IR
(µA)
10
3
10
2
10
1
10
−1
10
−2
0
100
Tj (oC)
200
V
R
= 75 V.
Solid line; maximum values. Dotted line; typical values.
Fig.5 Reverse current as a function of junction temperature.
MGD003
handbook, halfpage
40
Cd
(pF)
30
20
10
0
0
10
20
VR (V)
30
f = 1 MHz; T
j
= 25
°C.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 18
5

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