BC368_3.pdf

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC368
NPN medium power transistor
Product specification
Supersedes data of 1997 Feb 28
1999 Apr 26
Philips Semiconductors
Product specification
NPN medium power transistor
FEATURES
•
High current (1 A)
•
Low voltage (20 V).
APPLICATIONS
•
General purpose switching and amplification
•
Power applications such as audio output stages.
1
handbook, halfpage
BC368
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
DESCRIPTION
NPN medium power transistor in a TO-92; SOT54 plastic
package. PNP complement: BC369.
Fig.1
2
3
2
1
3
MAM259
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
32
20
5
1
2
200
0.83
+150
150
+150
V
V
V
A
A
mA
W
°C
°C
°C
UNIT
1999 Apr 26
2
Philips Semiconductors
Product specification
NPN medium power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 25 V
I
E
= 0; V
CB
= 25 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 1 V; see Fig.2
I
C
= 1 A; V
CE
= 1 V; see Fig.2
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage I
C
= 1 A; I
B
= 100 mA
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
= 5 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 1 V
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 500 mA;
V
CE
= 1 V
−
−
−
50
85
60
−
−
−
40
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
150
BC368
UNIT
K/W
MAX.
100
10
100
−
375
−
500
700
1
−
1.6
UNIT
nA
µA
nA
mV
mV
V
MHz
1999 Apr 26
3
Philips Semiconductors
Product specification
NPN medium power transistor
BC368
handbook, full pagewidth
300
MGD844
hFE
250
200
150
100
50
0
10
−1
1
10
10
2
10
3
IC (mA)
10
4
V
CE
= 1 V.
Fig.2 DC current gain; typical values.
1999 Apr 26
4
Philips Semiconductors
Product specification
NPN medium power transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BC368
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 26
5

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